dmp45h4d9h j 3 document number: ds 39244 rev. 2 - 2 1 of 7 www.diodes.com june 2017 ? diodes incorporated dm p45h4d9hj 3 450v p - channel enhancement mode mosfet product summary bv dss r ds (on ) m ax i d t c = + 25 c - 45 0v 4.9 ? @ v gs = - 10v - 4.6a description this mosfet is designed to minimize the on - state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? motor c ontrol ? dc - dc converters ? power m anagement f unctions ? uninterrupted p ower s upply features ? low input capacitance ? high bv d ss rating for power application ? low input/output leakage ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: to251 (type th) ? case m aterial: molded plasti c, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, me thod 208 ? weight: 0. 33 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm p45h4d9h j 3 to251 (type th) 75 pieces / tube notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "gre en" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information internal schematic to251 (type th) top view top view bottom view g d s = manufacturer s marking 45h4d9 = product type marking code yyww = date code marking yy or yy = last two digit s of year (ex: 1 7 = 201 7 ) ww or ww = week code (01 to 53) 45h4d9 yy ww green
dmp45h4d9h j 3 document number: ds 39244 rev. 2 - 2 2 of 7 www.diodes.com june 2017 ? diodes incorporated dm p45h4d9hj 3 maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 450 v gate - source voltage v gss 30 v continuous drain current (note 5 ) v gs = - 10 v steady state t c = + 25c t c = + 10 0c i d a maximum body diode forward current (note 5 ) i s a pulsed drain current ( 10 s p ulse, d uty c ycle = 1% ) i dm a avalanche current, l = 60 mh (note 7 ) i as a avalanche energy, l = 60 mh (note 7 ) e as mj peak d iode r ecovery dv/dt ( v dd = - 400 v, i d = - 2. 0 a ) dv/dt v/ns thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) t c = + 25c p d w t c = + 10 0c thermal resistance, junction to ambient (note 6 ) r ? ja c/w thermal resistance, junction to case (note 5 ) r ? j c operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristic s (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 45 0 ? ? gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? ds = - 45 0 v, v gs = 0v gate - source leakage i gss ? ? gs = 30 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) - 3.0 - 4.0 - 5 .0 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) ? ? gs = - 10 v, i d = - 1.05 a diode forward voltage v sd ? ? gs = 0v, i s = - 2.1 a dynamic characteristics (note 7 ) input capacitance c iss ? ? ds = - 25 v, v gs = 0v , f = 1.0mhz output capacitance c oss ? ? rss ? ? gs = - 10 v ) q g ? ? ? ? ds = - 360 v, i d = - 2.7 a , v gs = - 10 v gate - source charge q gs ? ? gd ? ? d( on ) ? ? dd = - 225v, r g = 3.0 ? d = - 2.7 a turn - on rise time t r ? ? d( off ) ? ? f ? ? ? ? rr ? ? gs = 0 v, v dd = - 200 v , i s = - 2.7 a , di /d t = 100a/ rr ? ? ? ? notes: 5 . device mounted on infinite heatsink . 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper pad layout. 7 . guaranteed by design. not subject to production testing . 8 . short duration pulse test used to minimize self - heating effect .
dmp45h4d9h j 3 document number: ds 39244 rev. 2 - 2 3 of 7 www.diodes.com june 2017 ? diodes incorporated dm p45h4d9hj 3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 i d , drain current (a) v ds , drain - source voltage (v) fig ure 1. typical output characteristic v gs = - 4.5v v gs = - 5.0v v gs = - 6.0v v gs = - 7.0v v gs = - 20v v gs = - 15v v gs = - 10v v gs = - 8.0v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 3 4 5 6 7 8 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = - 20 v - 55 o c 25 o c 85 o c 125 o c 150 o c 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs . drain current and gate voltage v gs = - 10v 0 2 4 6 8 10 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = - 1.05a 0 1 2 3 4 5 6 7 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature v gs = - 10v - 55 o c 25 o c 85 o c 125 o c 150 o c 0 0.5 1 1.5 2 2.5 3 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized ) t j , junction temperature ( gs = - 10v, i d = - 1.05a
dmp45h4d9h j 3 document number: ds 39244 rev. 2 - 2 4 of 7 www.diodes.com june 2017 ? diodes incorporated dm p45h4d9hj 3 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? j , junction temperature ( gs = - 10v, i d = - 1.05a 2 2.5 3 3.5 4 4.5 5 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = - 1ma i d = - 250 a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs = 0v t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c 0 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f = 1mhz c iss c oss c rss 0 2 4 6 8 10 0 2 4 6 8 10 12 14 v gs (v) q g (nc) figure 11. gate charge v ds = - 360v, i d = - 2.7a 0.1 1 10 10 100 1000 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) = 150 c = 25 gs = - 10v r ds(on) limited p w = 1s p w = 100ms p w = 10ms p w = 1ms p w = 100 s p w = 10 s
dmp45h4d9h j 3 document number: ds 39244 rev. 2 - 2 5 of 7 www.diodes.com june 2017 ? diodes incorporated dm p45h4d9hj 3 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r jc (t) = r(t) * r jc r jc = 1.2
dmp45h4d9h j 3 document number: ds 39244 rev. 2 - 2 6 of 7 www.diodes.com june 2017 ? diodes incorporated dm p45h4d9hj 3 package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. to251 (type th) to251 (type th) dim min max typ a 2.20 2.40 2.30 a2 0.97 1.17 1.07 b 0.68 0.90 0.78 b3 5.20 5.50 5.33 c 0.43 0.63 0.53 d 5.98 6.22 6.10 d1 5.30 ref e 2.286 bsc e 6.40 6.80 6.60 e1 4.63 5.03 4.83 h 16.22 16.82 16.52 k 0.40ref l 9.15 9.65 9.40 l3 0.88 1.28 1.02 l4 0.75 ref l5 1.65 1.95 1.80 p? 1.20 5 9 7 1 5 9 7 all dimensions in mm b3 e d1 e1 l a k c b e d h a2 l3 l5 p 0 0 0 01 l4
dmp45h4d9h j 3 document number: ds 39244 rev. 2 - 2 7 of 7 www.diodes.com june 2017 ? diodes incorporated dm p45h4d9hj 3 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes.com
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